2SC4438 データシートの表示（PDF） - Inchange Semiconductor
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2SC4438 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4438
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC current gain
IC= 1A; VCE= 5V
hFE-2
DC current gain
IC= 5A; VCE= 5V
Switching times
tstg
Storage Time
tf
Fall Time
IC= 5A , IB1= 1A; IB2= -2A;
VCC= 200V
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
μA
1.0 mA
1.0 mA
8
4
6
3.0 μs
0.3 μs
isc Website：www.iscsemi.cn
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