2SC4448 データシートの表示（PDF） - Inchange Semiconductor
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2SC4448 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
VBEsat Base-emitter saturation voltage
IC=50mA ;IB=5mA
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VEB=5V; IC=0
IC=10mA ; VCE=10V
IC=100mA ; VCE=10V
fT
Transition frequency
IC=40mA ; VCE=10V
COB
Collector output capacitance
f=1MHz;VCB=30V
Product Specification
2SC4448
MIN TYP. MAX UNIT
1.0
V
1.0
V
100 μA
10
μA
40
200
20
240
MHz
3.3
pF
2
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