AS6VA5128-BI データシートの表示（PDF） - Alliance Semiconductor
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AS6VA5128-BI Datasheet PDF : 9 Pages
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AS6VA5128
®
Functional description
The AS6VA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing
are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 55 ns are ideal for low-power applications. Active high and low chip
selects (CS) permit easy memory expansion with multiple-bank memory systems.
When CS is high, the device enters standby mode: the AS6VA5128 is guaranteed not to exceed 66 µW power consumption
at 3.3V and 55ns. The device also returns data when VCC is reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable ( WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CS (write cycle 2).To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip
drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 2.7V to 3.3V supply. The device is
available in the JEDEC standard 36(48)-ball FBGA package.
Absolute maximum ratings
Parameter
Device
Symbol
Min
Max
Unit
Voltage on VCC relative to VSS
VtIN
–0.5
VCC + 0.5
V
Voltage on any I/O pin relative to GND
VtI/O
–0.5
V
Power dissipation
PD
–
1.0
W
Storage temperature (plastic)
Tstg
–65
+150
°C
Temperature with VCC applied
Tbias
–55
+125
°C
DC output current (low)
IOUT
–
20
mA
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CS
WE
H
X
L
X
L
H
L
H
L
L
Key: X = Don’t care, L = Low, H = High.
OE
Supply Current I/O1–I/O8
X
ISB
High Z
X
ISB
High Z
H
ICC
High Z
L
ICC
DOUT
X
ICC
DIN
Mode
Standby (ISB)
Standby (ISB)
Output disable (ICC)
Read (ICC)
Write (ICC)
2
ALLIANCE SEMICONDUCTOR
10/6/00
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