2SC4672 データシートの表示（PDF） - Unisonic Technologies

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2SC4672

LOW FREQUENCY TRANSISTOR (50V,2A)

Unisonic Technologies 

2SC4672

NPN SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

2

A

Collector Current (Pulse) (Note 1)

ICP

5

A

Collector Dissipation

PC

500

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: 1.Single pulse, PW=10ms

2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Note : Measured using pulse current.

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(SAT)

hFE

fT

COB

TEST CONDITIONS

IC =50μA

IC =1mA

IE =50μA

VCB=60V

VEB=5V

IC /IB=1A/50mA (Note)

VCE=2V, IC =0.5A (Note)

VCE=2V, IE =-0.5A, f=100MHz

VCB=10V, IE =0A,f=1MHz

■ CLASSIFICATION OF hFE

RANK

RANGE

A

120 ~ 240

MIN TYP MAX

60

50

6

0.1

0.1

0.1 0.35

120

400

210

25

B

200 ~ 400

UNIT

V

V

V

μA

μA

V

MHz

pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R208-004.D

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