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2SC4881 データシートの表示(PDF) - Toshiba
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コンポーネント説明
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2SC4881
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC4881 Datasheet PDF : 4 Pages
1
2
3
4
I
C
– V
CE
10
80 90
70
100
60
8
50
40
6
30
20
4
IB = 10 mA
2
Common emitter
Tc = 25°C
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
h
EF
– I
C
1000
500
Tc = 100°C
300
25
−
25
100
50
30
Common emitter
VCE = 1 V
10
0.03 0.05 0.1
0.3 0.5 1
3 5 10
Collector current I
C
(A)
2SC4881
I
C
– V
BE
8
Common emitter
VCE = 1 V
6
4
Tc = 100°C
2
25
−
25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V
BE
(V)
V
CE (sat)
– I
C
3
Common emitter
1
IC/IB = 20
0.5
0.3
0.1
Tc = 100°C
0.05
0.03
25
−
25
0.01
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
5 IC/IB = 20
3
1
−
25
0.5
Tc = 100°C
25
0.3
0.1
0.03 0.05 0.1
0.3 0.5 1
3 5 10
Collector current I
C
(A)
Safe Operating Area
10 IC max (pulsed)
*
5
IC max (continuous)
3
DC operation
Tc = 25°C
1
100 µs
*
1 ms
*
10 ms
*
0.5
0.3
*
: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
0.1 linearly with increase in
temperature.
0.05
0.1
0.3 0.5 1
35
VCEO max
10
30 50 100
Collector-emitter voltage V
CE
(V)
3
2004-07-26
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