2SC4944-GR(TE85L,F データシートの表示（PDF） - Toshiba
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2SC4944-GR(TE85L,F Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4944
2SC4944
Audio Frequency General Purpose Amplefier Applications
Unit: mm
• Small package (dual type)
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• High hFE: hFE = 120 to 400
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1873
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
Junction temperature
Storage temperature range
PC
200
mW
(Note 1)
Tj
125
°C
Tstg
−55 to 125
°C
JEDEC
JEITA
TOSHIBA
―
―
2-2L1A
Note: Using continuously under heavy loads (e.g. the application of
Weight: 6.2 mg (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Start of commercial production
1992-07
1
2014-03-01
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