2SC4944-Y(TE85L,F) データシートの表示（PDF） - Toshiba

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2SC4944-Y(TE85L,F)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

ICBO

VCB = 60 V, IE = 0

IEBO

VEB = 5 V, IC = 0

hFE

(Note 2)

VCE = 6 V, IC = 2 mA

VCE (sat) IC = 100 mA, IB = 10 mA

fT

VCE = 10 V, IC = 1 mA

Cob

VCB = 10 V, IE = 0, f = 1 MHz

Note 2: hFE classification

Y (Y): 120 to 240, GR (G): 200 to 400

( ) Marking symbol

2SC4944

Min Typ. Max Unit

⎯

⎯

0.1

μA

⎯

⎯

0.1

μA

120

⎯

400

⎯

0.1 0.25

V

80

⎯

⎯ MHz

⎯

2

3.5

pF

2

2014-03-01

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