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2SC5030 データシートの表示(PDF) - Toshiba
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コンポーネント説明
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2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC5030 Datasheet PDF : 5 Pages
1
2
3
4
5
10
50 40 30
8
6
I
C
– V
CE
Common emitter
20
Ta = 25°C
10
5
4
2
2
IB = 0.5 mA
0
0
1
2
3
4
5
6
Collector-emitter voltage V
CE
(V)
2SC5030
I
C
– V
BE
8
Common emitter
VCE = 2 V
6
4
Ta = 125°C
2
25
−
40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V
BE
(V)
10000
3000
1000
h
FE
– I
C
Ta = 125°C
25
−
40
300
100
30
0.01
Common emitter
VCE = 2 V
0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
V
CE (sat)
– I
C
5
3 Common emitter
IC/IB = 200
1
0.3
0.1
Ta = 125°C
25
0.03
−
40
0.01
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
10
3
1
25
0.3
0.1
V
BE (sat)
– I
C
Common emitter
IC/IB = 200
Ta =
−
40°C
125
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
P
C
– Ta
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50 75 100 125 150 175
Ambient temperature Ta (°C)
3
2004-07-26
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