2SC5106(2003) データシートの表示（PDF） - Toshiba
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2SC5106 Datasheet PDF : 6 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5106
For VCO Application
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
Unit
20
V
10
V
3
V
15
mA
30
mA
150
mW
125
°C
-55~125
°C
2SC5106
Unit: mm
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
ICBO
VCB = 10 V, IE = 0
¾
IEBO
VEB = 1 V, IC = 0
¾
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
80
fT
VCE = 5 V, IC = 5 mA
4
ïS21eï2 VCE = 5 V, IC = 5 mA, f = 1 GHz
7
Cob
Cre
Cc･rbb’
¾
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
¾
VCB = 15 V, IC = 3 mA, f = 30 MHz
¾
¾
0.1
mA
¾
0.1
mA
¾
240
6
¾ GHz
11
¾
dB
0.7
¾
pF
0.5
0.9
pF
5.5
10
ps
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
1
2003-03-24
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