HT812L0 データシートの表示（PDF） - Holtek Semiconductor
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HT812L0 Datasheet PDF : 9 Pages
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HT812L0
Pad Description
Pad No. Pad Name
2
VDD
3
AUD
4
OSC2
5
OSC1
6
FLAG1
7
VSS
8
FLAG2
9~15, 1 KEY1~KEY8
I/O
Internal
Connection
Description
I
—
Positive power supply
O
PMOS
Open Drain
Voice/tone output driving an external transistor
O
—
Oscillator output pin
I
—
Oscillator input pin
O
NMOS 3Hz flash/busy output/6Hz (by code option), active
Open Drain low
I
—
Negative power supply (GND)
O
NMOS 3Hz flash/busy output/ENDP/sound level display
Open Drain (by mask option), active low
Trigger key, active low. KEY1 can be optioned as a
I
Pull-High
direct or sequential/random key, the 7 keys as
direct keys only or by mask option as 4×4 matrix
key
Absolute Maximum Ratings*
Supply Voltage ................................. –0.3V to 6V
Input Voltage................. VSS–0.3V to VDD+0.3V
Storage Temperature................. –50°C to 125°C
Operating Temperature............... –20°C to 70°C
*Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maxi-
mum Ratings” may cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme conditions may affect device reliability.
Electrical Characteristics
Symbol
Parameter
VDD
IOP
ISTB
IO
IOL
VIH
VIL
fOSC
Operating Voltage
Operating Current
Standby Current
Max. AUD Output Current
FLAG Sink Current
“H” Input Voltage
“L” Input Voltage
Oscillating Frequency
Test Conditions
VDD Conditions
—
—
3V
No load,
fOSC=96kHz
3V
—
3V VOH=0.6V
3V VOL=0.3V
—
—
—
—
3V
—
(Ta=25°C)
Min. Typ. Max. Unit
2.4
—
5.0
V
—
200 400
µA
—
1
–1.5 –2
2
3
0.8VDD —
0
—
—
96
3
µA
—
mA
—
mA
VDD
V
0.2VDD V
— kHz
3
5th May ’98
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