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2SC5352 データシートの表示(PDF) - Toshiba
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2SC5352
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC5352 Datasheet PDF : 4 Pages
1
2
3
4
I
C
– V
CE
10
1.2
1.0
Common emitter
0.8
Tc = 25°C
8
0.6
6
0.4
4
0.2
0.1
2
IB = 0.05 A
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
2SC5352
I
C
– V
BE
20
Common emitter
VCE = 5 V
16
12
8
Tc = 100°C
4
25
−
55
0
0
0.5
1
1.5
Base-emitter voltage V
BE
(V)
100
50
Tc = 100°C
30
25
−
55
10
5
3
h
FE
– I
C
Common emitter
VCE = 5 V
1
0.1
0.3 0.5 1
3 5 10
30
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
IC/IB = 8
5
3
−
55
1
0.5
Tc = 100°C
25
0.3
0.1
0.1
0.3 0.5 1
35
10
Collector current I
C
(A)
V
CE (sat)
– I
C
10
Common emitter
IC/IB = 8
5
3
1
0.5
0.3
0.1
0.1
−
55
25
Tc = 100°C
0.3 0.5 1
35
10
Collector current I
C
(A)
Safe Operating Area
30
IC max (pulsed)*
10
IC max
(continuous)
10
μ
s*
100
μ
s*
3
100 ms*
1 ms*
1
DC operation
0.3
Tc = 25°C
10 ms*
0.1
0.03
0.01
1
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
3
10
30
VCEO max
100
300
Collector-emitter voltage V
CE
(V)
1000
3
2006-11-10
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