2SC5212 データシートの表示（PDF） - KEXIN Industrial

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2SC5212

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SC5212

Transistors

■ Features

● Low Collector saturation voltage

● High fT fT=180MHz typ

● Excellent liinearity of DC forward current gain

● High collector current ICP =1A

● Complementary to 2SA1946

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

25

Collector - Emitter Voltage

VCEO

20

V

Emitter - Base Voltage

VEBO

4

Collector Current - Continuous

Collector Current - Pulse

IC

0.7

A

ICP

1

Collector Power Dissipation

PC

500

mW

Junction Temperature

Storage Temperature Range

TJ

150

℃

Tstg

-55 to 150

1.Base

2.Collector

3.Emitter

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Transition frequency

Symbol

Test Conditions

VCBO Ic= 100 μA， IE= 0

VCEO Ic= 1 mA， RBE= ∞

VEBO IE= 100μA， IC= 0

ICBO VCB= 25V , IE= 0

IEBO VEB= 4V , IC=0

VCE(sat) IC=500mA, IB=25mA

VBE(sat) IC=500mA, IB=25mA

hFE VCE= 4V, IC= 100mA

fT

VCE= 6V, IE= -10mA

Min Typ Max Unit

25

20

V

4

1

uA

1

0.2 0.5

V

1.2

150

800

180

MHz

■ Classification of hfe

Type

2SC5212- E

Range

Marking

150-300

UE

2SC5212- F

250-500

UF

2SC5212- G

400-800

UG

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