2SC5339 データシートの表示（PDF） - Inchange Semiconductor
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2SC5339 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5339
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-base breakdown voltage
IE=400mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A
5
V
VBEsat Base-emitter saturation voltage
IC=5A; IB=1.25A
1.3
V
ICBO
Collector cut-off current
VCB=1500V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
71
250 mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=5A ; VCE=5V
4
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
82
pF
固IN电C半H导AN体GE SEMICONDUTOR VF
Diode forward voltage
fT
Transition frequency
Switching times
ts
Storage time
IF=5A
IE=0.1A ; VCE=10V
ICP=5A;IB1(end) =1.1A
fH=31.5kHz
1.35 1.8
2.4
4
6
tf
Fall time
0.2 0.5
V
MHz
μs
μs
2
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