2SC5124 データシートの表示（PDF） - Inchange Semiconductor
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2SC5124 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5124
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞
800
V
VCEsat Collector-emitter saturation voltage IC=8A;IB=2A
5
V
VBEsat Base-emitter saturation voltage
IC=8A;IB=2A
1.5
V
ICBO1
Collector cut-off current
VCB=1200V; IE=0
100 μA
ICBO2
Collector cut-off current
VCB=1500V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100 μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=8A ; VCE=5V
4
9
fT
Transition frequency
IE=-1A ; VCE=12V
3
固IN电C半H导AN体GE SEMICONDUTOR COB
Output capacitance
VCB=10V;f=1MHz
130
Switching times
ton
Turn-on time
tstg
Storage time
0.1
IC=6A;IB1=1.2A; IB2-=-2.4A
RL=33.3Ω;VCC=200V
4.0
MHz
pF
μs
μs
tf
Fall time
0.2
μs
2
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