C5408 データシートの表示（PDF） - NEC => Renesas Technology
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C5408
NEC => Renesas Technology
C5408 Datasheet PDF : 8 Pages
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2SC5408
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
TEST CONDITIONS
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 7 mA Note 1
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCB = 2 V, IE = 0, f = 1 MHz Note 2
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCE = 2 V, IC = 1 mA, f = 2.0 GHz
MIN.
70
13
TYP.
17
0.1
15.5
1.1
MAX.
0.1
0.1
140
0.15
1.8
UNIT
µA
µA
GHz
pF
dB
dB
Rank
Marking
hFE
FB
T1E
70 to 40
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
100
20
30 mW
10
0
50
100
150
TA - Ambient Temperature - °C
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
25
0
0.5
1.0
VBE - Base to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
20
200 µA
180 µA
15
160 µA
140 µA
120 µA
10
100 µA
80 µA
60 µA
5
40 µA
IB = 20 µA
0
1.0
2.0
3.0
VCE - Collector to Emitter Voltage - V
2
200
VCE = 2 V
100
50
VCE = 1 V
20
10
12
5
10 20
50 100
IC - Collector Current - mA
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