2SC5418 データシートの表示（PDF） - Panasonic Corporation
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2SC5418 Datasheet PDF : 2 Pages
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Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1700
V
Collector to emitter voltage
VCES
1700
V
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
10
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
100
W
3.5
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1000V, IE = 0
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
min
typ
max Unit
50
µA
1
mA
50
µA
7
14
3
V
1.5
V
3
MHz
4.0
µs
0.3
µs
1
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