2SC5473 データシートの表示（PDF） - Panasonic Corporation
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2SC5473 Datasheet PDF : 3 Pages
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Transistor
2SC5473 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
s Features
q High transition frequency fT.
q High gain of 8.9dB and low noise of 1.8dB at 3V.
q Optimum for RF amplification of a portable telephone and
pager.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
2.1±0.1
0.425 1.25±0.10 0.425
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
9
V
Collector to emitter voltage VCEO
6
V
Emitter to base voltage
VEBO
1
V
Collector current
IC
30
mA
Collector power dissipation PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
0.2±0.1
1:Emitter
2:Collector
3:Emitter
4:Base
EIAJ:SC–82
S-Mini Type Package
Marking symbol : 3A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
ICBO
IEBO
hFE
Cob
fT
NF
| S21e |2
Conditions
VCB = 9V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 2GHz
VCE = 3V, IC = 3mA, f = 1.5GHz
VCE = 3V, IC = 10mA, f = 2GHz
min
typ
max Unit
1
µA
1
µA
80
200
0.4
pF
12.0
GHz
1.8
dB
8.9
dB
1
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