2SC5393 データシートの表示（PDF） - Panasonic Corporation
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2SC5393 Datasheet PDF : 2 Pages
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Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
600
V
VCES
600
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Base current
IB
1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 150V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
100
µA
100
µA
10
60
8
1
V
2
V
30
MHz
2.0
µs
0.3
µs
1
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