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2SC5550 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
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2SC5550
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC5550 Datasheet PDF : 5 Pages
1
2
3
4
5
2
Common emitter
VCE = 5 V
1.6
I
C
– V
BE
1.2
0.8
100
Tc =
−
55°C
0.4
25
0
0
0.4
0.8
1.2
1.6
2
2.4
Base-emitter voltage V
BE
(V)
2SC5550
Safe Operating Area
10
3
IC max (pulsed)*
IC max (continuous)
1
10 µs*
100 µs*
0.3
0.1
0.03
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
0.01
*: Single nonrepetitive pulse
0.003
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
3
10
30
VCEO max
100
300
Collector-emitter voltage V
CE
(V)
1000
4
2004-07-26
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