2SC5447 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5447

Silicon NPN Triple Diffused Character Display Horizontal Deflection Output

Hitachi -> Renesas Electronics 

2SC5447

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCES

VEBO

IC

ic(peak)

P Note1

C

Tj

Storage temperature

Tstg

Collector to emitter diode forward current ID

Note: 1. Value at Tc = 25°C

Ratings

Unit

1500

V

6

V

8

A

16

A

50

W

150

°C

–55 to +150

°C

8

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Emitter to base breakdown V(BR)EBO

6

voltage

Collector cutoff current

ICES

—

DC current transfer ratio

hFE1

5

DC current transfer ratio

hFE2

4

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter saturation

VBE(sat)

—

voltage

Collector to emitter diode

VECF

—

forward voltage

Fall time

tf

—

Fall time

tf

—

Typ

—

—

—

—

—

—

—

0.2

0.15

Max

—

500

25

6

5

1.5

2

0.4

—

Unit

V

µA

V

V

V

µs

µs

Test Conditions

IE = 400mA, IC = 0

VCE = 1500V, RBE = 0

VCE = 5 V, IC = 1A

VCE = 5 V, IC = 5A

IC = 5A, IB = 1.25A

IC = 5A, IB = 1.25A

IF = 8A

ICP = 4A, IB1 = 1.2A

fH = 31.5kHz

ICP = 4A, IB1 = 1A

fH = 64kHz

2

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