2SC5700 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5700

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Hitachi -> Renesas Electronics 

2SC5700

Absolute Maximum Ratings

(Ta = 25 °C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Value

15

4

1.5

50

80

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown V(BR)CBO 15





V

IC = 10 µA, IE = 0

voltage

Collector cutoff current

ICBO

Collector cutoff current

ICEO

Emitter cutoff current

IEBO

DC current transfer ratio

hFE

Collector output capacitance Cob





0.1

µA





1

µA





200 nA

100 130 170 



0.4

0.7

pF

VCB = 15 V, IE = 0

VCE = 4 V, RBE = Infinite

VEB = 0.8 V, IC = 0

VCE = 1 V, IC = 5 mA

VCB = 1 V, IE = 0,

f = 1 MHz

Gain bandwidth product

Forward transmission

coefficient

fT

10

12



GHz VCE = 1V, IC = 5 mA

|S21|2

13

16



dB

VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure

NF



1.0

1.7

dB

VCE = 1 V, IC = 5 mA,

f = 900 MHz,

ΓS = ΓL = 50 ohm

Rev.0, Jun. 2001, page 2 of 10

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