C5439 データシートの表示（PDF） - Inchange Semiconductor

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C5439

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A

VBEsat Base-emitter saturation voltage

IC=3.2A; IB=0.64 A

ICBO

Collector cut-off current

VCB=1000V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=1mA ; VCE=5V

hFE-2

DC current gain

IC=1A ; VCE=5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=0.64A ;IB2=1.28A

VCC≈200V;RL=62.5Ω

Product Specification

2SC5439

MIN TYP. MAX UNIT

450

V

1000

V

1.0

V

1.5

V

100 μA

10 μA

10

14

34

0.2

μs

2.0 3.5 μs

0.15

μs

2

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