2SC5913 データシートの表示（PDF） - Panasonic Corporation
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2SC5913 Datasheet PDF : 3 Pages
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Power Transistors
2SC5913
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT Monitor
■ Features
• High breakdown voltage: VCBO ≥ 1 500 V
• Wide safe operation area
• Built-in dumper diode
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
1 500
V
Collector-emitter voltage (E-B short) VCES
1 500
V
Emitter-base voltage (Collector open) VEBO
5
V
Base current
IB
3
A
Collector current
IC
6
A
Peak collector current *
ICP
9
A
Collector power dissipation
PC
40
W
Ta = 25°C
3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) VEBO IE = 500 mA, IC = 0
5
V
Forward voltage
VF
IF = 3 A
−2
V
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50
µA
VCB = 1 500 V, IE = 0
1
mA
Forward current transfer ratio
hFE VCE = 5 V, IC = 3 A
5
10
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.75 A
2.5
V
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 0.75 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
tstg IC = 3 A, Resistance loaded
5.0
µs
Fall time
tf
IB1 = 0.75 A, IB2 = −1.5 A
0.5
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00309AED
1
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