2SC5946 データシートの表示（PDF） - Panasonic Corporation
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2SC5946 Datasheet PDF : 2 Pages
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Transistors
2SC5946
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.33+–00..0025
0.10+–00..0025
■ Features
3
• High transition frequency fT
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
30
V
pe) Collector-emitter voltage (Base open) VCEO
20
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
3
V
sta tinu Collector current
IC
50
mA
a e cycle iscon Collector power dissipation
PC
100
mW
life d, d Junction temperature
Tj
125
°C
n u duct type Storage temperature
Tstg −55 to +125 °C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: 9N
inte ntins followlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-base voltage (Emitter open)
c tinued ance Emitter-base voltage (Collector open)
M is con inten Base-emitter voltage
/Dis ma Forward current transfer ratio
D ance type, Transition frequency *
ten ce Reverse transfer capacitance
ain nan (Common base)
VCBO
VEBO
VBE
hFE
fT
Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 800
VCE = 6 V, IC = 0, f = 1 MHz
V
V
720
mV
250
1 600 MHz
0.8
pF
M inte Reverse transfer capacitance
ma (Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0 1.5
pF
ned Power gain
PG VCB = 10 V, IE = −1 mA, f = 200 MHz
20
dB
(pla Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: June 2004
SJC00316AED
1
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