2SC5702 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5702

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Hitachi -> Renesas Electronics 

2SC5702

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Ratings

Unit

15

V

6

V

1.5

V

50

mA

80

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO

15

voltage

Collector cutoff current

I CBO



Collector cutoff current

I CEO



Emitter cutoff current

I EBO



DC current transfer ratio

hFE

80

Collector output capacitance Cob



Gain bandwidth product

fT

6.5

Power gain

PG

11

Noise figure

NF



Typ

18.5







120

0.85

8.0

13

1.05

Max



1

1

10

160

1.2





1.9

Unit

V

µA

mA

mA

V

pF

GHz

dB

dB

Test Conditions

IC = 10 µA, IE = 0

VCB = 10 V, IE = 0

VCE = 4 V, RBE = ∞

VEB = 1.5V, IC = 0

VCE = 1 V, IC = 5 mA

VCB = 1 V, IE = 0

f = 1 MHz

VCE = 1 V, IC = 5 mA

f = 1 MHz

VCE = 1 V, IC = 5 mA

f = 900 MHz

VCE = 1 V, IC = 5 mA

f = 900 MHz

2

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