2SC5757 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5757

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Hitachi -> Renesas Electronics 

2SC5757

Absolute Maximum Ratings

(Ta = 25 °C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

VEBO

IC

Pc

Tj

Tstg

Ratings

10

3.5

1.5

80

80

150

–55 to +150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown V(BR)CBO 10





V

voltage

IC = 10 µA, IE = 0

Collector cutoff current

ICBO

Collector cutoff current

ICEO

Emitter cutoff current

IEBO

DC current transfer ratio

hFE

Collector output capacitance Cob

Gain bandwidth product

fT

Power gain

PG





600 nA

VCB = 10 V, IE = 0





200 nA

VCE = 3.5 V, RBE = Infinite





100 nA

VEB = 1.5 V, IC = 0

80

100 130 

VCE = 1 V, IC = 5 mA

0.9 1.2 1.5 pF

VCB = 1 V, IE = 0, f = 1 MHz

4.5 6.5 

GHz VCE = 1 V, IC = 5 mA

8

11



dB

VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure

NF



1.1

2.0 dB

V = 1 V, I = 5 mA,

CE

C

f = 900 MHz

Rev.4, Jul. 2001, page 2 of 10

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