2SC5759 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5759

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Hitachi -> Renesas Electronics 

2SC5759

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

Collector current

IC

Collector power dissipation

Pc

Junction temperature

Tj

Storage temperature

Tstg

* When using aluminium ceramic board (12.5 x 20 x 0.7 mm)

Ratings

15

6

1.5

80

200*

150

–55 to +150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO

15

voltage

Collector cutoff current

I CBO

—

Collector cutoff current

I CEO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE

80

Collector output capacitance Cob

—

Gain bandwidth product

fT

8

Power gain

PG

7

Noise figure

NF

—

S21 parameter

Output IP3

|S21|2

—

OIP3

—

Typ

—

—

—

—

120

1.2

10.6

11.5

1.1

10.3

36

Max

—

1

1

10

160

2.2

—

—

1.9

—

—

Unit

V

Test Conditions

IC = 10 µA, IE = 0

µA

mA

µA

V

pF

GHz

dB

dB

dB

dBm

VCB = 12 V, IE = 0

VCE = 6 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 50 mA

VCB = 5 V, IE = 0

f = 1 MHz

VCE = 5 V, IC = 50 mA

f = 1 GHz

VCE = 5 V, IC = 50 mA

f = 900 MHz

VCE = 5 V, IC = 5 mA

f = 900 MHz

VCE = 5 V, IC = 50 mA

f = 1 GHz

VCE = 5 V, IC = 50 mA

f = 800 MHz

2

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