2SC5812 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Hitachi -> Renesas Electronics 

2SC5812

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

15

4

1.5

50

80

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown V(BR)CBO 15





V

voltage

IC = 10 µA, IE = 0

Collector cutoff current

ICBO

Collector cutoff current

ICEO

Emitter cutoff current

IEBO

DC current transfer ratio

hFE

Reverse transfer capacitance Cre





0.1

µA





1

µA





0.1

µA

100 120 150 



0.2



pF

VCB = 15 V, IE = 0

VCE = 4 V, RBE = Infinite

VEB = 0.8 V, IC = 0

VCE = 1 V, IC = 5 mA

VCE = 1 V, Emitter ground,

f = 1 MHz

Collector output capacitance Cob



0.4

0.7

pF

VCB = 1 V, IE = 0,

f = 1 MHz

Gain bandwidth product

Gain bandwidth product

Forward transmission

coefficient

fT(1)

8

11



GHz VCE = 1V, IC = 5 mA

fT(2)



15



GHz VCE = 1V, IC = 20 mA

|S21|2

14

17



dB

VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure

NF



1.0

1.7

dB

VCE = 1 V, IC = 5 mA,

f = 900 MHz,

ΓS = ΓL = 50 Ω

Rev.0, Nov. 2001, page 2 of 10

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