2SC5828 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5828

Silicon NPN Epitaxial VHF/UHF Wide band amplifier

Hitachi -> Renesas Electronics 

2SC5828

Absolute Maximum Ratings

(Ta = 25 °C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

15

5.5

1.5

80

80

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25 °C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Symbol Min

V(BR)CBO 15

ICBO

ICEO

IEBO

hFE

Cob







100



Gain bandwidth product

Power gain

fT

2.5

PG

11

Noise figure

NF



Typ









120

0.85

5.5

14

1.0

Max



0.1

1

0.1

150

1.15





1.7

Unit

V

µA

µA

µA



pF

GHz

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 15 V, IE = 0

VCE = 5.5 V, RBE = Infinite

VEB = 1.5 V, IC = 0

VCE = 1 V, IC = 5 mA

VCB = 1 V, IE = 0,

f = 1 MHz

VCE = 1 V, IC = 5 mA

VCE = 1 V, IC = 5 mA,

f = 900 MHz

VCE = 1 V, IC = 5 mA,

f = 900 MHz

Rev.0, Nov. 2001, page 2 of 10

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