2SC5849 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC5849

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Hitachi -> Renesas Electronics 

2SC5849

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

VEBO

IC

P

C

Tj

Tstg

Ratings

15

6.0

1.5

80

80

150

–55 to 150

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO 15

voltage

Collector cutoff current

ICBO



Collector cutoff current

ICEO



Emitter cutoff current

IEBO



DC current transfer ratio

hFE

90

Reverse transfer capacitance Cre



Collector output capacitance Cob



Gain bandwidth product

fT(1)

1.0

Gain bandwidth product

f (2)

T



Power gain

PG

10

Noise figure

NF



Typ









110

0.5

0.85

4.0

9.0

13

1.1

Max



0.1

0.1

0.1

140



1.15







1.8

Unit

V

µA

µA

µA



pF

pF

GHz

GHz

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 15 V, IE = 0

VCE = 6.0 V, RBE = Infinite

VEB = 1.5 V, IC = 0

VCE = 1 V, IC = 5 mA

VCE = 1 V, Emitter ground,

f = 1 MHz

VCB = 1 V, IE = 0, f = 1 MHz

VCE = 1 V, IC = 5 mA

V = 1 V, I = 30 mA

CE

C

VCE = 1 V, IC = 5 mA,

f = 900 MHz

V = 1 V, I = 5 mA,

CE

C

f = 900 MHz

Rev.0, Nov. 2001, page 2 of 10

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