2SC5890 データシートの表示（PDF） - Renesas Electronics

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2SC5890

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Renesas Electronics 

2SC5890

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

Collector to emitter voltage

V

CEO

Emitter to base voltage

VEBO

Collector current

IC

Collector power dissipation

Pc

20

V

12

V

1.5

V

75

mA

700*

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

*When using alumina ceramic board (25 x 60 x 0.7 mm)

Electrical Characteristics

(Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Reverse transfer capacitance

Gain bandwidth product

Symbol Min

V(BR)CBO

20

ICBO

ICEO

IEBO

hFE

Cob

Cre

fT

—

—

—

100

—

—

5.5

Forward transfer coefficient

S212 —

Power gain

PG

9.5

Noise figure

NF

—

Typ Max Unit Test Conditions

—

—

V

IC = 10µ A, IE = 0

—

1

—

1

—

10

150 200

0.9 1.5

0.85 —

7.8 —

11

—

12

—

1.0 1.9

µA

mA

µA

V

pF

pF

GHz

dB

dB

dB

VCB = 12 V, IE = 0

VCE = 9 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 30 mA,

f = 1 GHz

VCE = 5 V, IC = 30 mA,

f = 1 GHz

V = 5 V, I = 30 mA,

CE

C

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.0, Aug. 2002, page 2 of 14

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