2SD1211 データシートの表示（PDF） - Panasonic Corporation
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2SD1211 Datasheet PDF : 3 Pages
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Transistor
2SD1211
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB0987 (2SB987)
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage VCEO
120
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+Ð00..115
2.5+Ð00..26
2.5+Ð00..26
0.45+Ð00..115
1 23
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L-A1 Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = 0.1mA, IB = 0
120
V
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 150mA
130
330
VCE = 5V, IC = 500mA
50
IC = 300mA, IB = 30mA
1
V
IC = 300mA, IB = 30mA
1.2
V
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
VCB = 10V, IE = 0, f = 1MHz
20
pF
*hFE1 Rank classification
Rank
R
S
hFE1
130 ~ 220 185 ~ 330
Note.) The Part number in the Parenthesis shows conventional part number.
595
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