2SD1198 データシートの表示（PDF） - Panasonic Corporation
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2SD1198 Datasheet PDF : 3 Pages
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Transistors
2SD1198, 2SD1198A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Unit: mm
■ Features
• Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4
000 to 20 000.
• A shunt resistor is omitted from the driver.
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
2.5±0.1
(1.0)
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
(0.85)
0.55±0.1
0.45±0.05
Collector-base voltage 2SD1198 VCBO
30
V
e e) (Emitter open)
2SD1198A
60
c . typ Collector-emitter voltage 2SD1198 VCEO
25
V
n d stage tinued (Base open)
2SD1198A
50
le on Emitter-base voltage (Collector open) VEBO
5
V
a elifecyc disc Collector current
IC
1
A
n u ct ped, Peak collector current
ICP
1.5
A
rodu d ty Collector power dissipation *
PC
1
W
te tin ur P tinue Junction temperature
Tj
150
°C
g fo con Storage temperature
Tstg −55 to +150 °C
in n llowin d dis Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
fo ne board thickness of 1.7 mm for the collector portion
3
2
1
(2.5) (2.5)
Internal Connection
B
1: Base
2: Collector
3: Emitter
M-A1 Package
C
≈ 200 Ω E
a o includestype, pla ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed ce Parameter
Symbol
Conditions
M is ntinu tenan Collector-base voltage
isco ain (Emitter open)
2SD1198 VCBO
2SD1198A
IC = 100 µA, IE = 0
e/D e, m Collector-emitter voltage
D anc typ (Base open)
2SD1198 VCEO
2SD1198A
IC = 1 mA, IB = 0
inten ance Emitter-base voltage (Collector open)
Ma inten Collector-base cutoff current (Emitter open)
ned ma Emitter-base cutoff current (Collector open)
(pla Forward current transfer ratio *1, 2
VEBO
ICBO
IEBO
hFE
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VCB = 45 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
Min Typ Max Unit
30
V
60
25
V
50
5
V
100 nA
4 000
100 nA
20 000
Collector-emitter saturation voltage *1 VCE(sat) IC = 1 A, IB = 1 mA
1.8
V
Base-emitter saturation voltage *1
VBE(sat) IC = 1 A, IB = 1 mA
2.2
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Publication date: December 2002
SJC00209BED
1
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