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2SD1222 データシートの表示(PDF) - Toshiba
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2SD1222
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
2SD1222 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
4
Common emitter
Tc = 25°C
300
3
275
250
225
2
200
1
IB = 175
μ
A
0
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
4
Common emitter
Tc =
−
55°C
3
600
500
2
400
1
IB = 300
μ
A
0
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
2SD1222
I
C
– V
CE
4
Common emitter
Tc = 100°C
3
200
175
2
150
125
1
IB = 100
μ
A
0
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
I
C
– V
BE
4
Common emitter
VCE = 2 V
3
2
Tc = 100°C 25
−
55
1
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V
BE
(V)
10000
5000
3000
h
FE
– I
C
Tc = 100°C
25
−
55
1000
500
300
0.1
Common emitter
VCE = 2 V
0.3
1
3
10
Collector current I
C
(A)
V
CE (sat)
– I
C
5
Common emitter
IC/IB = 500
3
1
0.5
0.2
Tc =
−
55°C
25
100
0.5
1
3
5
Collector current I
C
(A)
3
2010-02-05
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