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2SD1224 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
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2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
2SD1224 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
500
Common emitter
60
Tc = 25°C
400
50
40
300
30
200
20
100
IB = 10
μ
A
0
0
0
1
2
3
4
5
6
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
500
Common emitter
160
Tc =
−
50°C
140
400
120
100
300
80
200
60
40
100
IB = 20
μ
A
0
0
0
1
2
3
4
5
6
Collector-emitter voltage V
CE
(V)
2SD1224
I
C
– V
CE
500
Common emitter
Tc = 100°C
35
30
400
25
300
20
15
200
10
100
IB = 5
μ
A
0
0
0
1
2
3
4
5
6
Collector-emitter voltage V
CE
(V)
I
C
– V
BE
1.0
Common emitter
VCE = 2 V
0.8
0.6
Tc = 100°C 25
−
50
0.4
0.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Base-emitter voltage V
BE
(V)
30000
10000
5000
3000
1000
500
300
0.002
h
FE
– I
C
Tc = 100°C
25
−
50
0.01 0.03
Common emitter
VCE = 2 V
0.1
0.3
1
3
Collector current I
C
(A)
10
5
3
1
0.5
0.3
0.1
0.002
V
CE (sat)
– I
C
Common emitter
IC/IB = 1000
Tc =
−
50°C
25
100
0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
3
2006-11-21
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