D111 データシートの表示（PDF） - Inchange Semiconductor

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D111

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD111

DESCRIPTION

·High Power Dissipation-

: PC= 100W@TC= 25℃

·High Current Capability-

: IC = 10A

APPLICATIONS

·Designed for power amplifier , power switching ,DC-DC

converter and regulator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

10

A

IE

Emitter Current-Continuous

-10

A

IBB

Base Current-Continuous

3

A

PC

Collector Power Dissipation @TC=25℃ 100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

isc Website：www.iscsemi.cn

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