2SD1154 データシートの表示（PDF） - Inchange Semiconductor
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2SD1154 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1154
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output for B/W TV set.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
50
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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