2SD1154 データシートの表示（PDF） - Inchange Semiconductor
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2SD1154 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1154
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.4A
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
VCE= 350V; VBE= 0;TC= 100℃
1
V
1.2
V
0.1
mA
1
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
5
mA
hFE
DC Current Gain
tf
Fall Time
IC= 5A ; VCE= 4V
IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω
11
36
0.75
μs
hFE Classifications
R
Q
P
11-15 11-22 18-36
isc Website：www.iscsemi.cn
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