2SD1157 データシートの表示（PDF） - Inchange Semiconductor

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2SD1157

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1157

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 50V(Min)

·High DC Current Gain-

: hFE= 250V(Min.) @IC= 0.5A

·Low Collector Saturation Voltage

·High Reliability

APPLICATIONS

·Switching regulators

·DC-DC converter

·Solid sate relay

·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

4

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

1

A

25

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

5.0

℃/W

isc Website：www.iscsemi.cn

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