2SD1157 データシートの表示（PDF） - Inchange Semiconductor
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2SD1157 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1157
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
50
V
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB=B 0
50
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 50mA
0.5
V
VB E(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1A; IB=B 50mA
VCB= 80V; IE= 0
1.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
100 μA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
250
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A, IB1= -IB2= 0.2A;
RL= 5Ω; PW= 20μs; Duty≤2%
0.5 μs
3.0 μs
0.8 μs
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