D1180 データシートの表示（PDF） - SavantIC Semiconductor

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D1180

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1180

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=100µA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100µA ; IC=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=1A; IB=0.2A

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=3V; IC=0

hFE

DC current gain

IC=150mA ; VCE=5V

MIN TYP. MAX UNIT

110

V

120

V

5

V

0.7

V

1.3

V

1.0

µA

1.0

µA

100

2

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