2SD1257P データシートの表示（PDF） - TY Semiconductor

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コンポーネント説明

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2SD1257P

Silicon NPN Epitaxial Planar Type

TY Semiconductor 

SMD Type

Transistors

Product specification

2SD1257,2SD1257A

Electrical Characteristics Ta = 25

Parameter

Collector-emitter voltage

Collector-base cutoff current

Emitter-base cutoff current

Forward current transfer ratio

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

2SD1257

2SD1257A

Symbol

Testconditons

VCEO IC = 10 mA, IB = 0

ICBO VCB = 100 V, IE = 0

IEBO VEB = 5 V, IC = 0

VCE = 2 V, IC = 3 A

hFE

VCE = 2 V, IC = 0.1A

VCE(sat) IC = 5 A, IB = 0.25 A

VBE(sat) IC = 5 A, IB = 0.25 A

fT VCE = 10 V, IC = 0.5 A, f = 10 MHz

ton IC=3A

tstg IB1=-IB2=0.3 A

tf VCC=50V

Min Typ Max Unit

80

V

100

V

10 ìA

50 ìA

90

260

45

0.5 V

1.5 V

30

MHz

0.5

ìs

1.5

ìs

0.1

ìs

hFE Classification

Rank

hFE

Q

90 180

P

130 260

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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