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2SD1262 データシートの表示(PDF) - Panasonic Corporation

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2SD1262 Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
8.5±0.2
Complementary to 2SB0939, 2SB0939A
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
Features
High forward current transfer ratio hFE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
Collector-base voltage 2SD1262 VCBO
60
V
(Emitter open)
2SD1262A
80
Collector-emitter voltage 2SD1262 VCEO
60
V
(Base open)
2SD1262A
80
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
8
A
Peak collector current
ICP
12
A
Collector power dissipation
PC
45
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1262 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD1262A
80
Collector-base cutoff
current (Emitter open)
2SD1262 ICBO
2SD1262A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VEB = 7 V, IC = 0
VCE = 3 V, IC = 4 A
VCE = 3 V, IC = 8 A
IC = 4 A, IB = 8 mA
IC = 4 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 4 A
IB1 = 8 mA, IB2 = −8 mA
1 000
500
100 µA
100
2
mA
10 000
1.5
V
2.0
V
20
MHz
0.5
µs
4.0
µs
Fall time
tf
VCC = 50 V
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
1 000 to 2500 2 000 to 5 000 4 000 to 10 000
Publication date: April 2003
SJD00178BED
1

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