2SD1262 データシートの表示（PDF） - Panasonic Corporation

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2SD1262

Silicon NPN triple diffusion planar type darlington Power Transistors

Panasonic Corporation 

2SD1262, 2SD1262A

50

(1)

40

30

PC  Ta

(1)TC=Ta

(2)With a 50×50×2mm

Al heat sink

(3)Without heat sink

(PC=1.3W)

20

10

(2)

(3)

0

0

40

80

120

160

Ambient temperature Ta (°C)

IC  VCE

12

TC=25˚C

10

8

IB=4.0mA

3.5mA

3.0mA

6

2.5mA

2.0mA

1.5mA

4

1.0mA

0.5mA

2

0

0

1

2

3

4

5

Collector-emitter voltage VCE (V)

VCE(sat)  IC

(1) IC/IB=250

10

(2) IC/IB=500

(3) IC/IB=1000

TC=25˚C

(3)

(2)

(1)

1

0.1

0.01

0.1

1

10

Collector current IC (A)

VCE(sat)  IC

IC/IB=500

10

TC=100˚C

25˚C

–25˚C

1

0.1

VBE(sat)  IC

IC/IB=500

10

TC=–25˚C

25˚C

1

100˚C

0.1

hFE  IC

105

VCE=3V

TC=100˚C

104

25˚C

–25˚C

103

102

0.01

0.1

1

10

Collector current IC (A)

0.01

0.1

1

10

Collector current IC (A)

10

0.1

1

10

100

Collector current IC (A)

Safe operation area

100

Non repetitive pulse

TC=25˚C

ICP

10

IC

t=300ms

1

t=10ms

t=1ms

0.1

0.01

1

10

100

1 000

Collector-emitter voltage VCE (V)

Rth  t

103

(1)Without heat sink

(2)With a 50×50×2mm Al heat sink

102

(1)

(2)

10

1

10−1

10−2

10−4

10−3

10−2

10−1

1

10

102

103

104

Time t (s)

2

SJD00178BED

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