2SD1263(2003) データシートの表示（PDF） - Panasonic Corporation
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2SD1263 Datasheet PDF : 3 Pages
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Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
■ Features
• High collector-base voltage (Emitter open) VCBO
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1263 VCBO
350
V
1.4±0.1
1.3±0.2
(Emitter open)
2SD1263A
400
/ Collector-emitter voltage 2SD1263 VCEO
250
V
0.8±0.1
0.5+–00..12
e ) (Base open)
2SD1263A
300
c type Emitter-base voltage (Collector open) VEBO
5
V
n d tage. ued Collector current
IC
0.75
A
le s ntin Peak collector current
ICP
1.5
A
a e cyc isco Collector power
TC = 25°C PC
35
W
life d, d dissipation
2.0
n u duct type Junction temperature
te tin r Pro ued Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
ing fouiscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
in n follow ed d Parameter
Symbol
Conditions
des , plan Collector-emitter voltage
a o inclu type (Base open)
2SD1263 VCEO
2SD1263A
IC = 30 mA, IB = 0
c ed ce Base-emitter voltage
M is ntinu tenan Collector-emitter cutoff
isco ain current (E-B short)
VBE
2SD1263 ICES
2SD1263A
e/D e, m Collector-emitter cutoff
D anc typ current (Base open)
2SD1263 ICEO
2SD1263A
inten ance Emitter-base cutoff current (Collector open)
Ma inten Forward current transfer ratio
ned ma Collector-emitter saturation voltage
(pla Transition frequency
IEBO
hFE1 *
hFE2
VCE(sat)
fT
VCE = 10 V, IC = 1 A
VCE = 350 V, VBE = 0
VCE = 400 V, VBE = 0
VCE = 150 V, IB = 0
VCE = 200 V, IB = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 0.3 A
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A, f = 10 MHz
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Min Typ Max Unit
250
V
300
1.5
V
1
mA
1
1
mA
1
1
mA
40
250
10
1
V
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
0.5
µs
Storage time
tstg
VCC = 50 V
2.0
µs
Fall time
tf
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
40 to 90
70 to 150 120 to 250
Publication date: April 2003
SJD00179BED
1
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