2SD1263 データシートの表示（PDF） - Panasonic Corporation
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2SD1263 Datasheet PDF : 3 Pages
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Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
I Features
• High collector to base voltage VCBO
• Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD1263
VCBO
350
V
voltage
2SD1263A
400
Collector to
2SD1263
VCEO
250
V
emitter voltage 2SD1263A
300
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
0.75
A
Collector power TC = 25°C
PC
35
W
dissipation
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1263
2SD1263A
Collector cutoff
current
2SD1263
2SD1263A
Emitter cutoff current
Collector to emitter
voltage
2SD1263
2SD1263A
ICES
ICEO
IEBO
VCEO
VCE = 350 V, VBE = 0
VCE = 400 V, VBE = 0
VCE = 150 V, IB = 0
VCE = 200 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1 *
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 10 V, IC = 0.3 A
VCE = 10 V, IC = 1 A
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A,
VCC = 50 V
Note) *: Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Min Typ Max Unit
1
mA
1
1
mA
1
1
mA
250
V
300
70
250
10
1.5
V
1
V
30
MHz
0.5
µs
2
µs
0.5
µs
1
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