2SD1272 データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SD1272 Datasheet PDF : 3 Pages
| |||
Power Transistors
2SD1272
Silicon NPN epitaxial planar type
For high-speed switching and high current amplification ratio
■ Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
200
V
Collector-emitter voltage (Base open) VCEO
150
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
2.5
A
Peak collector current
ICP
1
A
Collector power
TC = 25°C PC
40
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
VCEO
ICBO
IEBO
hFE
VCE(sat)
fT
IC = 25 mA, IB = 0
VCB = 200 V, IE = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.2 A
IC = 0.5 A, IB = 0.02 A
VCE = 4 V, IC = 0.1 A, f = 10 MHz
150
V
100 µA
100 µA
500
2 000
1
V
25
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
500 to 1 200 800 to 2 000
Publication date: February 2003
SJD00186BED
1
Share Link: 