2SD1272 データシートの表示（PDF） - Panasonic Corporation

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2SD1272

Silicon NPN epitaxial planar type

Panasonic Corporation 

2SD1272

50

(1)

40

30

PC  Ta

(1)TC=Ta

(2)With a 100×100×2mm

Al heat sink

(3)With a 50×50×2mm

Al heat sink

(4)Without heat sink

(PC=2W)

20

(2)

10

(3)

(4)

0

0

40

80

120

160

Ambient temperature Ta (°C)

IC  VCE

0.5

TC=25˚C

IB=400µA

0.4

350µA

300µA

0.3

250µA

200µA

0.2

150µA

100µA

0.1

50µA

0

0 2 4 6 8 10 12

Collector-emitter voltage VCE (V)

VCE(sat)  IC

IC/IB=25

10

TC=100˚C

1

25˚C

–25˚C

0.1

0.01

0.01

0.1

1

Collector current IC (A)

VBE(sat)  IC

hFE  IC

104

IC/IB=25

104

VCE=4V

10

TC=100˚C

103 25˚C

103

TC=100˚C

25˚C

–25˚C

1

–25˚C

102

102

0.1

10

10

fT  IC

VCE=4V

f=10MHz

TC=25˚C

0.01

0.01

0.1

1

Collector current IC (A)

1

0.01

0.1

1

10

Collector current IC (A)

1

0.01

0.1

1

10

Collector current IC (A)

Safe operation area

100

Non repetitive pulse

TC=25˚C

10

ICP

1 IC

0.1

t=10ms

t=1ms

DC

0.01

1

10

100

1000

Collector-emitter voltage VCE (V)

Rth  t

103 (1)Without heat sink

(1)

(2)With a 100×100×2mm Al heat sink

102

(2)

10

1

10−1

10−2

10−4

10−3

10−2

10−1

1

10

102

103

104

Time t (s)

2

SJD00186BED

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