2SD1495 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SD1495 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1495
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
600
V
6
V
5.0
V
1.5
V
10 μA
6
isc Website：www.iscsemi.cn
2
Share Link: 