D1351 データシートの表示（PDF） - Inchange Semiconductor
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D1351 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
Cob
Output capacitance
fT
Transition frequency
Switching times
IC=0.5A ; VCE=5V
IE=0; VCB=10V,f=1MHz
IC=0.5A ; VCE=5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=0.2A
VCC=30V;RL=15Ω
Duty cycle≤1%
hFE Classifications
O
Y
GR
60-120 100-200 150-300
Product Specification
2SD1351
MIN TYP. MAX UNIT
60
V
0.25 1.0
V
0.7
1.0
V
0.1
mA
0.1
mA
60
300
35
pF
3.0
MHz
0.65
μs
1.30
μs
0.65
μs
2
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